Increases in memory and logic speed in computers of up to 10 times is possible by combining a standard magnetic material with a material known as a “topological insulator.”
Researchers from Penn State and Cornell University concluded that using normal room temperatures, spin-oriented electrons can control the direction of the magnetic polarity in the adjacent material.
This study is the first indication that these materials could provide the basis for practically applicable technologies to increase computing speed.
Read more at Penn State University, Cornell University